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PDF PSMN8R7-80PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN8R7-80PS | |
| Descripción | N-channel 80 V 8.7 m standard level MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN8R7-80PS
www.DataSheet4U.com
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220
Rev. 01 — 29 January 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 90 A; Vsup ≤ 80 V;
RGS = 50 Ω; unclamped
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A;
VDS = 40 V;
see Figure 14 and 15
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 13
[1] Measured 3 mm from package.
[1]
Min Typ Max Unit
- - 80 V
- - 90 A
- - 170 W
-55 -
175 °C
- - 120 mJ
- 11.6 - nC
- 52 - nC
- - 14 mΩ
- 7.5 8.7 mΩ
1 page  
NXP Semiconductors
PSMN8R7-80PSwww.DataSheet4U.com
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11 and 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 125 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
RG internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
QGS
QGS(th)
total gate charge
gate-source charge
pre-threshold
gate-source charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14 and 15
ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14
QGS(th-pl) post-threshold
gate-source charge
QGD
gate-drain charge
ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14 and 15
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 40 V; see Figure 15
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 40 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 40 V; RL = 1.6 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
Min Typ Max Unit
73
80
1
-
2
-
-
-
-
-
-
[2] -
-
--V
--V
--V
- 4.6 V
34V
0.08 5
- 100
2 100
2 100
18 21
- 14
7.5 8.7
1-
µA
µA
nA
nA
Ω
mΩ
mΩ
Ω
- 44 - nC
- 52 - nC
- 15 - nC
- 9.2 - nC
- 5.8 - nC
- 11.6 - nC
- 4.6 - V
- 3346 - pF
- 296 - pF
- 158 - pF
- 21 - ns
- 26 - ns
- 46 - ns
- 20 - ns
PSMN8R7-80PS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 29 January 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PSMN8R7-80PSwww.DataSheet4U.com
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220
8. Revision history
Table 7. Revision history
Document ID
Release date
PSMN8R7-80PS_1
20100129
Data sheet status
Objective data sheet
Change notice
-
Supersedes
-
PSMN8R7-80PS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 29 January 2010
© NXP B.V. 2010. All rights reserved.
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