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PDF MRF8S7170NR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF8S7170NR3 | |
| Descripción | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for base station applications with frequencies from 728 to 768 MHz.
Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
hD Output PAR ACPR
(%)
(dB)
(dBc)
728 MHz
748 MHz
768 MHz
19.7 37.1
19.5 37.0
19.4 37.9
6.2 -38.7
6.1 -37.5
6.1 -37.8
Document Number: MRF8S7170N
Rev. 0, 2/2010
www.DataSheet4U.com
MRF8S7170NR3
728-768 MHz, 50 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ] 182 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
CASE 2021-03, STYLE 1
OM-780-2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
VDSS
VGS
VDD
Tstg
TC
TJ
-0.5, +70
-6.0, +10
32, +0
-65 to +150
150
225
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW, 28 Vdc, IDQ = 1200 mA
Case Temperature 81°C, 50 W CW, 28 Vdc, IDQ = 1200 mA
RθJC
0.30
0.37
°C/W
Ăă1. Continuous use at maximum temperature will affect MTTF.
Ăă2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Ăă3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
1
1 page  
TYPICAL CHARACTERISTICS
21 40
20.6
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1200 mA
Single-Carrier W-CDMA
38
20.2
ηD
3.84 MHz Channel Bandwidth 36
Input Signal PAR = 7.5 dB
19.8 @ 0.01% Probability on CCDF 34
19.4 Gps
32
19 -35.5
18.6 IRL
18.2
17.8
PARC
-36
-36.5
-37
17.4
17 ACPR
-37.5
-38
710 720 730 740 750 760 770 780 790
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
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-7 0
-1 1 -0.5
-15 -1
-19 -1.5
-23 -2
-27 -2.5
-10
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1200 mA
Two-Tone Measurements
-20 (f1 + f2)/2 = Center Frequency of 748 MHz
-30 IM3-U
IM3-L
IM5-U
-40
IM5-L
-50
IM7-U
IM7-L
-60
1 10 100
TWO-T ONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two-T one Spacing
20 1
60 -20
19.5 0
-1 dB = 42 W
19 -1
-2 dB = 60 W
ACPR
ηD
55 -25
50 -30
18.5 -2
-3 dB = 96 W
45
Gps
-35
18 -3
40 -40
17.5 -4
VDD = 28 Vdc, IDQ = 1200 mA
f = 748 MHz, Single-Carrier W-CDMA
PARC
35
3.84 MHz Channel Bandwidth, Input Signal
-45
17 -5
PAR = 7.5 dB @ 0.01% Probability on CCDF
30
-50
30 50 70 90 110 130
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
5
5 Page 
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RF Device Data
Freescale Semiconductor
MRF8S7170NR3
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MRF8S7170NR3.PDF ] | |
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