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PDF TPC6104 Data sheet ( Hoja de datos )
| Número de pieza | TPC6104 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC6104
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIwII)ww.DataSheet4U.com
TPC6104
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 12 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
−20
−20
±8
−5.5
−22
2.2
0.7
4.9
−2.75
0.22
150
−55~150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
654
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8 °C/W
178.5 °C/W
Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
123
1 2004-07-06
1 page  
RDS (ON) – Ta
160
Common source
Pulse test
120
VGS = −1.8 V
−4.5 A
80
−2.5 V
40
−4.5 V
−2.2 A
ID = −1.1A
−4.5 A
ID = −1.1 A, −2.2 A
ID = −1.1 A, −2.2 A, −4.5 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC6104
www.DataSheet4U.com
−100
−30
IDR – VDS
Common source
Ta = 25°C
Pulse test
−10 −2.0 −4
−1.8
−3
−1
VGS = 0 V
−1
0 0.4 0.8 1.2 1.6
Drain-source voltage VDS (V)
2.0
10000
Capacitance – VDS
3000
1000
Ciss
300
Coss
Crss
100
Common source
30 Ta = 25°C
f = 1 MHz
VGS = 0 V
10
−0.1 −0.3
−1
−3
−10 −30
Drain-source voltage VDS (V)
−100
Vth – Ta
−2.0
Common source
VDS = −10 V
ID = −200 µA
Pulse test
−1.5
−1.0
−0.5
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
2.5
(1) t = 5 s
2
1.5
(1) DC
1
(2) t = 5 s
0.5
(2) DC
PD – Ta
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output characteristics
−20 Common source
ID = −6 A
Ta = 25°C
−16 Pulse test
VGS
−10
−8
VDD = −16 V
−12
−8 V
−8
−4 −4 V
VDD = −16 V
−8 V
−4 V
−6
−4
−2
00
0 8 16 24 32 40
Total gate charge Qg (nC)
5 2004-07-06
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC6104.PDF ] | |
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