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PDF CLT435 Data sheet ( Hoja de datos )
| Número de pieza | CLT435 | |
| Descripción | NPN Silicon Phototransistor | |
| Fabricantes | Clairex Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CLT435 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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CLT435
NPN Silicon Phototransistor
0.190 (4.83)
0.176 (4.47)
0.210 (5.33)
0.190 (4.83)
0.500 (12.7) min
Clairex®
www.DataSheet4U.com
Technologies, Inc.
March, 2001
0.215 (5.46)
0.205 (5.21)
0.158 (4.01)
0.136 (3.45)
0.060 (1.52)
max
0.025 (0.64)
max
0.019 (0.48)
0.016 (0.41)
COLLECTOR
BNA/SCE
EMITTER
0.100 (2.54) dia
0.147 (3.73)
0.137 (3.48)
ALL DIMENSIONS ARE IN INCHESC(aMsILeL1IM7ETERS)
features
absolute maximum ratings (TA = 25°C unless otherwise stated)
• ±9° acceptance angle
storage temperature ....................................................................... -65°C to +150°C
• custom aspheric lensed TO-18
package
operating temperature .................................................................... -65°C to +125°C
lead soldering temperature(1) .......................................................................... 260°C
• transistor base is not bonded
collector-emitter voltage...................................................................................... 30V
• tested and characterized at 660nm
• RoHS compliant
continuous collector current ............................................................................. 50mA
continuous power dissipation(2)..................................................................... 250mW
description
The CLT435 is a silicon NPN
phototransistor mounted in a TO-18
package which features a custom
double convex glass-to-metal
sealed aspheric lens. Narrow
acceptance angle enables excellent
on-axis coupling. The CLT435 is
mechanically and spectrally
matched to Clairex's CLE435 LED.
For additional information, call
Clairex.
notes:
1. 0.06” (1.5mm) from the header for 5 seconds maximum
2. Derate linearly 2.0mW/°C from 25°C free air temperature to TA = +125°C.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol parameter
min typ max units test conditions
IL Light current(3)
0.5 1.0
-
mA VCE = 5V, Ee = 0.5mW/cm2
ICEO Collector dark current
- - 25 nA VCE = 10V, Ee = 0
V(BR)CEO Collector-emitter breakdown
30 - - V IC = 100µA
tr, tf Output rise and fall time
- 5.0 -
µs IC = 1mA, VCE=5V, RL=1kΩ.
θHP Total angle at half sensitivity points
- 18 - deg.
notes: 3. Radiation source is a gallium arsenide phosphide LED operating at a peak emission wavelength of 660nm.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/13/06
Clairex Technologies, Inc.
1301 East Plano Parkway
Plano, Texas 75074-8524
Phone: 972-265-4900
Fax: 972-265-4949
www.clairex.com
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet CLT435.PDF ] | |
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