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Teilenummer | MTB12N04J3 |
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Beschreibung | N -Channel Enhancement Mode Power MOSFET | |
Hersteller | Cystech Electonics | |
Logo | ||
Gesamt 7 Seiten CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh7e0e7Jt43U.com
Issued Date : 2009.04.23
Revised Date :
Page No. : 1/7
N -Channel Enhancement Mode Power MOSFET
MTB12N04J3
BVDSS
40V
ID 30A
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
RDSON(MAX)
12mΩ
Equivalent Circuit
MTB12N04J3
Outline
TO-252
G:Gate D:Drain
S:Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTB12N04J3
Limits
40
±20
30
20
120
20
20
10
50
26
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification
CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh7e0e7Jt43U.com
Issued Date : 2009.04.23
Revised Date :
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
100°C
150°C
−Temperature Max(TS max)
−Time(ts min to ts max)
150°C
60-120 seconds
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB12N04J3
CYStek Product Specification
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ MTB12N04J3 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
MTB12N04J3 | N -Channel Enhancement Mode Power MOSFET | Cystech Electonics |
MTB12N04J3 | N -Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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