(PDF) CMBD99 Datasheet - SILICON EPITAXIAL GENERAL SWITCHING DIODE

Número de pieza	CMBD99
Descripción	SILICON EPITAXIAL GENERAL SWITCHING DIODE
Fabricantes	Continental Device India Limited
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No Preview Available ! Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL GENERAL SWITCHING DIODE 3 Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 1 2 CATHODE www.DataSheet4U.com CMBD99 SOT-23 MARKING : C7 Silicon Epitaxial General Switching Double Diode Series. ABSOLUTE MAXIMUM RATINGS (per diode) DESCRIPTION SYMBOL VALUE Repetitive Peak Reverse Voltage VRM 35 Continuous Reverse Voltage VR 30 Non- Repetitive Peak Forward Current t=1us IFSM 4.0 Peak Forward Current IFM 300 Average Forward Current IO 100 Power Dissipation Ta=25 deg C PT 150 Junction Temperature Tj 125 Storage Temperature Tstg -55 to +125 ELECTRICAL CHARACTERISTICS (per diode) (Ta=25 deg C Unless otherwise noted) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX Reverse Voltage Leakage Current Forward Voltage Diode Capacitance IR VR=30V - VF IF=10mA - IF=50mA - IF=100mA - CD VR=0V, f=1MHz - - 100 - 1.0 - 1.2 - 1.4 - 4.0 UNIT V V A mA mA mW deg C deg C UNIT nA V V V pF Continental Device India Limited Data Sheet Page 1 of 3 1 page

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PDF CMBD99 Data sheet ( Hoja de datos )