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PDF SSF6401 Data sheet ( Hoja de datos )
| Número de pieza | SSF6401 | |
| Descripción | PWM applications | |
| Fabricantes | Silikron Semiconductor Co | |
| Logotipo |  |
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DESCRIPTION
The SSF6401 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = -12V,ID = -4.3A
RDS(ON) < 85mΩ @ VGS=-2.5V
RDS(ON) < 50mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
SSF6401
www.DataSheet4U.com
D
G
S
Schematic diagram
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
6401
SSF6401
SOT-23
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-12
±8
-4.3
-34
1.3
-55 To 150
100
Unit
V
V
A
A
W
℃
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-12V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±8V,VDS=0V
Min Typ Max Unit
-12 V
-1 μA
±100
nA
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.0
1 page  
SSF6401
www.DataSheet4U.com
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
5
http://www.silikron.com
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF6401.PDF ] | |
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