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Número de pieza | SI4684DY_RC | |
Descripción | R-C Thermal Model Parameters | |
Fabricantes | Vaishali Semiconductor | |
Logotipo | ||
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No Preview Available ! R-C Thermal Model Parameters
Si4684DY_RC
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DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
configuration are included. The corresponding values
for the Cauer/Filter configuration are available upon
request.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1 5.4825 N/A
RT2 14.0940 N/A
RT3 11.8997 N/A
RT4 18.5795 N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1 8.6182 m N/A
CT2 93.6547 m N/A
CT3 6.1489 N/A
CT4 3.2294 N/A
Foot
2.7730
5.6035
12.5420
6.9783
Foot
617.0550 µ
18.1606 m
73.2626 m
9.1092 m
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number:74111
Revision 14-Nov-05
www.vishay.com
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Número de pieza | Descripción | Fabricantes |
SI4684DY_RC | R-C Thermal Model Parameters | Vaishali Semiconductor |
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