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PDF SI4684DY Data sheet ( Hoja de datos )
| Número de pieza | SI4684DY | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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N-Channel 30-V (D-S) MOSFET
Si4684DY
wVwwis.DhaataySheSeitl4iUc.coonmix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
30 0.0094 at VGS = 10 V
0.0115 at VGS = 4.5 V
ID (A)a
16
14
Qg (Typ)
14 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4684DY-T1-E3 (Lead (Pb)-free)
FEATURES
• Extremely Low Qgd WFET® Technology
for Low Switching Losses
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Server
D
RoHS
COMPLIANT
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
30
± 12
16
12.9
12b,c
9.5b,c
50
4.0
2.3b,c
20
20
4.45
2.85
2.50b,c
1.6b,c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb,d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 90 °C/W.
t ≤ 10 sec
Steady State
Document Number: 73324
S-61013-Rev. B, 12-Jun-06
Symbol
RthJA
RthJF
Typical
36
22
Maximum
50
28
Unit
°C/W
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C unless noted
20
16
12
8
4 Package Limited
0
0 25 50 75 100 125 150
TC – Case Temperature (°C)
Current Derating*
Si4684DY
wVwwis.DhaatayShSeeitl4iUc.oconmix
100
10
1
TA =
L·
BV -
ID
VDD
0.1
0.00001 0.0001
0.001
0.01
0.1
TA – Time In Avalanche (sec)
Single Pulse Avalanche Capability
1
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73324
S-61013-Rev. B, 12-Jun-06
www.vishay.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI4684DY.PDF ] | |
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