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PDF JDH2S02FS Data sheet ( Hoja de datos )

Número de pieza JDH2S02FS
Descripción UHF Band Mixer
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! JDH2S02FS Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S02FS
JDH2S02FS
UHF Band Mixer
Suitable for reducing set size through the use of a two-pin small
package supporting high-density mounting
Unit: mm
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Forward current
Junction temperature
Storage temperature range
VR 10 V
IF 10 mA
Tj 125 °C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Forward voltage
Forward current
Reverse current
Capacitance
VF IF = 1 mA
IF VF = 0.5 V
IR VR = 0.5 V
CT VR = 0.2 V, f = 1 MHz
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking
0.2
0.07 M A ±0.05
0.1±0.05
0.48+-00..0023
JEDEC
JEITA
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
0.24
2 ⎯⎯
⎯ ⎯ 25
0.3
V
mA
μA
pF
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
1 2007-11-01

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