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PDF MRF8S9220HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF8S9220HR3 | |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1600 mA, Pout = 65 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF.
Frequency
Gps
(dB)
hD Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
940 MHz
960 MHz
19.7 35.1
19.8 35.3
19.4 35.7
6.1 - 37.4
6.2 - 37.5
6.1 - 37.4
Document Number: MRF8S9220H
Rev. 0, 11/2009
MRF8S9220HR3
MRF8S9220HSR3
920 - 960 MHz, 65 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 317 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ] 220 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465 - 06, STYLE 1
NI - 780
MRF8S9220HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF8S9220HSR3
Table 1. Maximum Ratings
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Drain- Source Voltage
Rating
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
Value
- 0.5, +70
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81‘°C, 65 W CW, 28 Vdc, IDQ = 1600 mA
Case Temperature 81°C, 220 W CW, 28 Vdc, IDQ = 1600 mA
RθJC
0.39
0.32
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
1
1 page  
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20.5
20
19.5
19
18.5
18
17.5
TYPICAL CHARACTERISTICS
20
19.6
VDD = 28 Vdc, Pout = 65 W (Avg.)
IDQ = 1600 mA, Single−Carrier
19.2 W−CDMA
3.84 MHz Channel Bandwidth
18.8 ηD
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
18.4
18 Gps
42
40
38
36
34
32
17.6 −31
IRL
17.2 −33
16.8
PARC
16.4
ACPR
−35
−37
16 −39
820 840 860 880 900 920 940 960 980
f, FREQUENCY (MHz)
Figure 2. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 65 Watts Avg.
0
−5
−10
−15
−20
−25
0
VDD = 28 Vdc, Pout = 200 W (PEP), IDQ = 1600 mA
−10 Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
−20
IM3−U
−30
IM3−L
−40 IM5−U
IM5−L
−50 IM7−U
−60
1
IM7−L
10
100
TWO−TONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two - Tone Spacing
1
0
−1
−1 dB = 59.8 W
−2
ACPR
ηD
60
50
40
Gps 30
−2 dB = 81.0 W
−3 −3 dB = 110.1 W
PARC 20
−4 VDD = 28 Vdc, IDQ = 1600 mA, f = 940 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
−5
30 50 70 90 110
10
0
130
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
−25
−30
−35
−40
−45
−50
−55
−1.5
−2
−2.5
−3
−3.5
−4
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
5
5 Page 
www.DataSheet4U.com
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet MRF8S9220HR3.PDF ] | |
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