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PDF KHB9D5N20F Data sheet ( Hoja de datos )
| Número de pieza | KHB9D5N20F | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de KHB9D5N20F (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
FEATURES
VDSS=200V, ID=9.5A
Drain-Source ON Resistance
: RDS(ON)=400m @VGS = 10V
Qg(typ.)=18.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KHB9D5N20P
KHB9D5N20F
UNIT
KHB9D5N20F2
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
30 V
Drain Current
@TC=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
ww(wN.Dotaeta3S) heet4U.com
ID
IDP
EAS
EAR
dv/dt
9.5 9.5*
38 38*
180
8.7
5.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Tc=25
Derate above25
PD
87
0.7
40 W
0.32 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.44
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
3.13 /W
62.5 /W
D
G
2008. 12. 19
S
Revision No : 2
KHB9D5N20P/F/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB9D5N20P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB9D5N20F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB9D5N20F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7
1 page  
KHB9D5N20P/F/F2
Fig12. Transient Thermal Response Curve
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
TIME (sec)
(KHB9D5N20P)
PDM
t1
t2
- Duty Factor, D= t1/t2
- Rthjc=1.44
10-1 100 101
www.DataSheet4U.com
100
Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
Fig13. Transient Thermal Response Curve
(KHB9D5N20F, KHB9D5N20F2)
Single Pulse
10-4 10-3 10-2
TIME (sec)
PDM
t1
t2
- Duty Factor, D= t1/t2
- Rthjc=3.13
10-1 100 101
2008. 12. 19
Revision No : 2
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KHB9D5N20F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| KHB9D5N20F | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
| KHB9D5N20F1 | (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
| KHB9D5N20F2 | (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
| KHB9D5N20F2 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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