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PDF STF13NM60N-H Data sheet ( Hoja de datos )

Número de pieza STF13NM60N-H
Descripción N-channel MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STF13NM60N-H Hoja de datos, Descripción, Manual

STF13NM60N-H
N-channel 600 V, 0.28 , 11 A MDmesh™ II Power MOSFET
in TO-220FP
Features
Type
VDSS
(@Tjmax)
STF13NM60N-H 650 V
RDS(on)
max
< 0.36
ID
11 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
www.DataSheet4U.com
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
3#
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STF13NM60N-H(1)
13NM60N
TO-220FP
Tube
1. The device meets ECOPACK® standards, an environmentally-friendly grade of products commonly referred to as
“halogen-free” . See Section 4: Package mechanical data.
January 2010
Doc ID 16963 Rev 1
1/13
www.st.com
13

1 page




STF13NM60N-H pdf
STF13NM60N-H
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 5.5 A
RG = 4.7 VGS = 10 V
(see Figure 16)
Min. Typ. Max. Unit
3 ns
8 ns
--
30 ns
10 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 11 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
11 A
-
44 A
- 1.5 V
230
-2
18
ns
µC
A
290
- 190
17
ns
µC
A
www.DataSheet4U.com
Doc ID 16963 Rev 1
5/13

5 Page





STF13NM60N-H arduino
STF13NM60N-H
Table 9. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Figure 22. TO-220FP drawing
www.DataSheet4U.com
A
B
L7
Dia
L6
H
Package mechanical data
mm
Typ.
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
D
L5
F1 F2
F
G
G1
L2
L3
Doc ID 16963 Rev 1
L4
7012510_Rev_K
11/13

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