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PDF 46V16M16 Data sheet ( Hoja de datos )
| Número de pieza | 46V16M16 | |
| Descripción | MT46V16M16 | |
| Fabricantes | Micron Technology | |
| Logotipo |  |
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DOUBLE DATA RATE
(DDR) SDRAM
FEATURES
• 167 MHz Clock, 333 Mb/s/p data rate
• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
• Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (x16 has two - one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has
two - one per byte)
• Programmable burst lengths: 2, 4, or 8
• Concurrent Auto Precharge option supported
• Auto Refresh and Self Refresh Modes
• FBGA package available
• 2.5V I/O (SSTL_2 compatible)
• tRAS lockout (tRAP = tRCD)
• Backwards compatible with DDR200 and DDR266
OPTIONS
PART NUMBER
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64 Meg x 4 (16 Meg x 4 x 4 banks)
64M4
32 Meg x 8 (8 Meg x 8 x 4 banks) 32M8
16 Meg x 16 (4 Meg x 16 x 4 banks) 16M16
• Plastic Package
66-Pin TSOP (OCPL)
TG
60-Ball FBGA (16x9mm)
FJ
• Timing - Cycle Time
6ns @ CL = 2.5 (DDR333B–FBGA)1
6ns @ CL = 2.5 (DDR333B–TSOP)1
7.5ns @ CL = 2 (DDR266A)2
-6
-6T
-75Z
• Self Refresh
Standard
none
NOTE: 1. Supports PC2700 modules with 2.5-3-3 timing
2. Supports PC2100 modules with 2-3-3 timing
PRELIMINARY‡
256Mb: x4, x8, x16
DDR333 SDRAM Addendum
MT46V64M4 – 16 Meg x 4 x 4 banks
MT46V32M8 – 8 Meg x 8 x 4 banks
MT46V16M16 – 4 Meg x 16 x 4 banks
For the latest data sheet revisions, please refer to the Micron
Web site: www.micron.com/dramds
DDR333 COMPATIBILITY
DDR333 meets or surpasses all DDR266 timing re-
quirements thus assuring full backwards compatibility
with current DDR designs. In addition, these devices
support concurrent auto-precharge and tRAS lockout
for improved timing performance. The 256Mb,
DDR333 device will support an (tREFI) average peri-
odic refresh interval of 7.8us.
The standard 66-pin TSOP package is offered for
point-to-point applications where the FBGA package
is intended for the multi-drop systems.
The Micron 256Mb data sheet provides full specifi-
cations and functionality unless specified herein.
CONFIGURATION
Architecture 64 Meg x 4
32 Meg x 8
16 Meg x 16
Configuration 16 Meg x 4 x 4 banks 8 Meg x 8 x 4 banks 4 Meg x 16 x 4 banks
RefreshCount
8K
8K
8K
RowAddressing
8K (A0–A12)
8K (A0–A12)
8K (A0–A12)
BankAddressing
4 (BA0, BA1)
4 (BA0, BA1)
4 (BA0, BA1)
ColumnAddressing 2K (A0–A9, A11)
1K (A0–A9)
512 (A0– A8)
KEY TIMING PARAMETERS3
SPEED
CLOCK RATE DATA-OUT ACCESS DQS-DQ
GRADE CL = 21 CL = 2.51 WINDOW2 WINDOW SKEW
-6 133 MHz 167 MHz 2.15ns
-6T 133 MHz 167 MHz 2.0ns
±0.70ns +0.35ns
±0.75ns +0.45ns
-75Z 133 MHz 133 MHz 2.5ns ±0.75ns +0.50ns
NOTE:
1. CL = CAS (Read) Latency
2. With a 50/50 clock duty cycle and a minimum clock
rate @ CL = 2 ( -75Z) and CL = 2.5 (-6, -6T).
3. -75, -8 are also available; see base data sheet.
256Mb: x4, x8, x16 DDR333 SDRAM
256Mx4x8x16DDR333_B.p65 – Rev. B; Pub. 10/01
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
‡ PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION AND DATA SHEET SPECIFICATIONS.
1 page  
PRELIMINARY
256Mb: x4, x8, x16
DDR333 SDRAM Addendum
PIN DESCRIPTIONS (continued)
BALL / PIN NUMBERS
FBGA
TSOP SYMBOL
A8, B9, B7
C9, C7, D9
D7, E9, E1
D3, D1, C3
C1, B3, B1,
A2
2, 4, 5,
7, 8, 10
11, 13, 54
56, 57, 59
60, 62, 63,
65
DQ0-2
DQ3-5
DQ6-8
DQ9-11
DQ12-14
DQ15
A8, B7, C7,
D7, D3, C3,
B3, A2
2, 5, 8,
11, 56, 59
62, 65
DQ0-2
DQ3-5
DQ6-7
B7, D7, D3, 5, 11, 56
B3 62
DQ0-2
DQ2
E3
E7, E3
51 DQS
16, 51 LDQS, UDQS
14, 17, 25,
43, 53
19, 50
B2, D2, C8, 3, 9, 15, 55,
E8, A9
61
A1, C2, E2, 6, 12, 52,
B8, D8
58, 64
F8, M7, A7 1, 18, 33
A1, A3, F2, 34, 48, 66
M3
www.DataSFh1eet4U.com 49
F9 17
NC
DNU
VDDQ
VSSQ
VDD
VSS
VREF
A13
TYPE
I/O
I/O
I/O
I/O
-
–
Supply
Supply
Supply
Supply
Supply
I
DESCRIPTION
Data Input/Output: Data bus for x16
Data Input/Output: Data bus for x8
Data Input/Output: Data bus for x4
Data Strobe: Output with read data, input with write data. DQS is
edge-aligned with read data, centered in write data. It is used to
capture data. For the x16 , LDQS is DQS for DQ0-DQ7 and UDQS
IS DQS for DQ8-DQ15. Pin 16 (H7) is NC on x4 and x8.
No Connect: These pins should be left unconnected.
Do Not Use: Must float to minimize noise on Vref
DQ Power Supply: +2.5V ±0.2V. Isolated on the die for improved
noise immunity.
DQ Ground. Isolated on the die for improved noise immunity.
Power Supply: +2.5V ±0.2V.
Ground.
SSTL_2 reference voltage.
Address input A13 for 1Gb devices.
256Mb: x4, x8, x16 DDR333 SDRAM
256Mx4x8x16DDR333_B.p65 – Rev. B; Pub. 10/01
5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
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