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3TH41 Schematic ( PDF Datasheet ) - Galaxy Semi-Conductor

Teilenummer 3TH41
Beschreibung FAST RECOVERY RECTIFIER
Hersteller Galaxy Semi-Conductor
Logo Galaxy Semi-Conductor Logo 




Gesamt 2 Seiten
3TH41 Datasheet, Funktion
BL GALAXY ELECTRICAL
FAST RECOVERY RECT IFIER
3TH41
VOLTAGE RANGE: 1500 V
CURRENT: 3.0 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.041 ounces ,1.15 gram s
Mounting pos ition: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
www.DataSheet4U.com
9.5mm lead length,
@TA=75
Peak forw ard surge current
VRRM
V R MS
VDC
IF (AV)
8.3ms single half -sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 3.5 A
IF SM
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance (Note2)
CJ
Typical thermal resistance
(Note3)
Operating junction temperature range
RθJA
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC .
3. Thermal resistance f rom junction to ambient.
3TH41
1500
1050
1500
3.0
200.0
1.5
10.0
200.0
800
32
22
- 55---- +150
- 55---- +150
UNITS
V
V
V
A
A
V
A
ns
pF
/W
www.galaxycn.com
Document Number 0261034
BLGALAXY ELECTRICAL
1.





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