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PDF IR11672AS Data sheet ( Hoja de datos )
| Número de pieza | IR11672AS | |
| Descripción | ADVANCED SMART RECTIFIER CONTROL IC | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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November 19, 2009
IR11672AS
ADVANCED SMART RECTIFIER TM CONTROL IC
Features
Product Summary
• Secondary side high speed SR controller
• DCM, CrCM flyback and Resonant half-bridge Topology
topologies
• 200V proprietary IC technology
VD
• Max 500KHz switching frequency
• Anti-bounce logic and UVLO protection
VOUT
• 7A peak turn off drive current
• Micropower start-up & ultra low quiescent current
Io+ & I o- (typical)
• 10.7V gate drive clamp
Turn on Propagation
• 50ns turn-off propagation delay
Delay
•
•
•
Vcc range from 11.3V to 20V
Direct sensing of MOSFET drain voltage
Enable function synchronized with MOSFET VDS
Turn off Propagation
Delay
transition
• Cycle by Cycle MOT Check Circuit prevents multiple Package Options
false trigger GATE pulses
• Lead-free
• Compatible with 0.3W Standby, Energy Star, CECP,
etc.
Flyback,
Resonant Half-bridge
200V
10.7V
+2A & -7A
60ns (typical)
50ns (typical)
Typical Applications
• LCD & PDP TV, Telecom SMPS, AC-DC adapters,
ATX SMPS, Server SMPS
Typical Connection Diagram
8-Lead SOIC
www.DataSheet4U.com Vin
Rs
Cs
Ci
XFM
Rdc
RMOT
U1
1 VCC VGATE 8
2 OVT
GND 7
3 MOT
VS 6
4 EN
VD 5
Rg
IRIR1111667712AS
Cdc
Co
Rtn Q1
*Please note that this datasheet contains advance information that could change before the product is
released to production.
www.irf.com
© 2009 International Rectifier
1 page  
IR11672AS
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions.
Parameters
Supply Voltage
Enable Voltage
Cont. Drain Sense Voltage
Pulse Drain Sense Voltage
Source Sense Voltage
Gate Voltage
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Package Power Dissipation
Switching Frequency
Symbol
VCC
VEN
VD
VD
VS
VGATE
TJ
TS
RθJA
PD
fsw
Min.
-0.3
-0.3
-3
-5
-3
-0.3
-40
-55
Max.
20
20
200
200
20
20
150
150
128
970
500
Units
V
V
V
V
V
V
°C
°C
°C/W
mW
kHz
Remarks
VCC=20V, Gate off
SOIC-8
SOIC-8, TAMB=25°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
VCC
VD
TJ
Fsw
Definition
Supply voltage
Drain Sense Voltage
Junction Temperature
Switching Frequency
Min.
11.4
-3
-25
---
Max.
18
200
125
500
Units
V
°C
kHz
Recommended Component Values
www.DataSheet4U.com
Symbol
Component
RMOT
MOT pin resistor value
Min.
5
Max.
75
Units
kΩ
www.irf.com
© 2009 International Rectifier
5
5 Page 
IR11672AS
Detailed Pin Description
VCC: Power Supply
This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to
turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC.
To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as
close as possible to the IR11672A. This pin is internally clamped.
OVT: Offset Voltage Trimming
The OVT pin will program the amount of input offset voltage for the turn-off threshold VTH1.
The pin can be optionally tied to ground, to VCC or left floating, to select 3 ranges of input offset trimming.
This programming feature allows for accommodating different RDSon MOSFETs.
MOT: Minimum On Time
The MOT programming pin controls the amount of minimum on time. Once VTH2 is crossed for the first time,
the gate signal will become active and turn on the power FET. Spurious ringings and oscillations can trigger
the input comparator off. The MOT blanks the input comparator keeping the FET on for a minimum time.
The MOT is programmed between 200ns and 3us (typ.) by using a resistor referenced to COM.
EN: Enable
This pin is used to activate the IC “sleep” mode by pulling the voltage level below 1.6V (typ). In sleep mode
the IC will consume a minimum amount of current. All switching functions will be disabled and the gate will be
inactive.
VD: Drain Voltage Sense
VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must
be taken in properly routing the connection to the power MOSFET drain.
Additional filtering and or current limiting on this pin are not recommended as it would limit switching
performance of the IC.
VS: Source Voltage Sense
VS is the differential sense pin for the power MOSFET Source. This pin must not be connected directly to the
power ground pin (7) but must be used to create a Kelvin contact as close as possible to the power MOSFET
www.DatasSoheuertc4eU.pcoinm.
GND: Ground
This is ground potential pin of the integrated control circuit. The internal devices and gate driver are
referenced to this point.
VGATE: Gate Drive Output
This is the gate drive output of the IC. Drive voltage is internally limited and provides 2A peak source and 7A
peak sink capability. Although this pin can be directly connected to the power MOSFET gate, the use of
minimal gate resistor is recommended, especially when putting multiple FETs in parallel.
Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve
optimal switching performance.
www.irf.com
© 2009 International Rectifier
11
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