Datenblatt-pdf.com


IFE50-xx Schematic ( PDF Datasheet ) - FULL POWER SEMICONDUCTOR

Teilenummer IFE50-xx
Beschreibung 5A FAST EFFICIENT RECTIFIER
Hersteller FULL POWER SEMICONDUCTOR
Logo FULL POWER SEMICONDUCTOR Logo 




Gesamt 2 Seiten
IFE50-xx Datasheet, Funktion
FULL POWER
SEMICONDUCTOR
5A FAST EFFICIENT RECTIFIER
FEATURES
l Low power loss, high efficiency
l Low forward voltage drop
l High current capability
l High speed switching
l High reliability
l High current surge
l Glass passivated chip junction
l Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
l CaseJEDEC ITO-220 molded plastic.
l LeadSolderable per MIL-STD-202, method 208
l Mounting positionAny
l Weight1.81 grams
IFE50-005
THRU
IFE50-06
OB
C
D
12
F
H
I
G
E
PIN 1
J
K
L
M
Millimeters
MIN MAX
B 9.72 10.27
C 6.30 6.90
D 14.50 15.50
E 13.00 13.80
F - 4.1
G 4.95 5.20
H - 1.52
I - 0.9
J - 4.8
K - 3.1
L 2.5 2.9
M - 0.8
O Ø 3.0 Ø 3.4
PIN 2
CASE: ITO-220
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified
single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL
IFE50
-005
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
wwMw.aDxaimtauSmheDeCt4UB.lcoockming Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave
Superimposed on Rated Load
VRRM
VRMS
VDC
IO
IFSM
50
35
50
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
CJ
ROJA
TOP
Storage Temperature Range
TSTG
Maximum Forward Voltage at IO DC
Maximum Reverse Current at TA = 25
Maximum Reverse Current at TA = 100
VF
IR
IR
Maximum Reverse Recovery Time (Note 3)
NOTE
TRR
1. Measured at 1 MHz and applied reverse voltage of 4.0 volts
2. Both leads attached to heat sink 20×20×1t(mm) copper plate at lead length 5mm
3. Reverse recovery test conditions: IF=0.5A, IR=1.0A, IRR=0.25A
IFE50
-01
100
70
100
0.98
IFE50
-02
200
140
200
IFE50
-03
300
210
300
5.0
IFE50
-04
400
280
400
125
85
2.2
- 55 TO + 150
-55 TO + 150
1.25
10
100
25
IFE50
-05
500
350
500
IFE50 UNITS
-06
600 V
420 V
600 V
A
A
50 pF
/W
1.85 V
µA
µA
nS





SeitenGesamt 2 Seiten
PDF Download[ IFE50-xx Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
IFE50-xx5A FAST EFFICIENT RECTIFIERFULL POWER SEMICONDUCTOR
FULL POWER SEMICONDUCTOR

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche