|
|
PDF K3114 Data sheet ( Hoja de datos )
| Número de pieza | K3114 | |
| Descripción | MOSFET ( Transistor ) - 2SK3114 | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K3114 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3114
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3114
Isolated TO-220
FEATURES
• Low on-state resistance:
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A)
• Low gate charge:
QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)
• Gate voltage rating: ±30 V
• Avalanche capability ratings
• Isolated TO-220 package
5 (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±4.0
±16
A
A
Total Power Dissipation (TC = 25°C) PT1 30 W
www.DataSheet4U.com
Total Power Dissipation (TA = 25°C) PT2 2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
–55 to +150
°C
IAS 4.0 A
EAS 10.7 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13337EJ2V0DS00 (2nd edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998
1 page  
2SK3114
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
ID = 4.0 A
2.0 A
3.0
2.0
1.0
0
-50
VGS = 10 V
Pulsed
0 50 100 150
Tch - Channel Temperature - ˚C
10 000
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHZ
Ciss
100
Coss
10
Crss
1
0.1 1
10 100
VDS - Drain to Source Voltage - V
10 000
www.DataSheet4U.com
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/mS
VGS = 0 V
1 000
100
10
0.01
0.1 1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1.0
0.1 0 V
VGS = 10 V
0 0.5
Pulsed
1.0 1.5
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
100
td(off)
tf
10 td(on)
1
0.1
0.1
tr
VDD = 150 V
9VGS = 10 V
RG = 10
1 10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
ID = 4 A
14
600 VDD = 450 V
300 V
150 V
12
10
400 VGS 8
6
200 4
VDS 2
0
0 4 8 12 16
Qg - Gate Charge - nC
Data Sheet D13337EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3114.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K3113 | MOSFET ( Transistor ) - 2SK3113 | NEC |
| K3114 | MOSFET ( Transistor ) - 2SK3114 | NEC |
| K3115 | MOSFET ( Transistor ) - 2SK3115 | NEC |
| K3115B | N-CHANNEL POWER MOS FET |  Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |