(PDF) SPN3458 Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	SPN3458
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN3458 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3458 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES 60V/5.0A,RDS(ON)= 115Ω@VGS=10V 60V/4.5A,RDS(ON)= 125Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design PIN CONFIGURATION( TSOP– 6P ) www.DataSheet4U.com PART MARKING 2008/12/31 Ver.1 Page 1 1 page SPN3458 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS www.DataSheet4U.com 2008/12/31 Ver.1 Page 5 5 Page

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PDF SPN3458 Data sheet ( Hoja de datos )