(PDF) SPN3632 Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	SPN3632
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN3632 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 100V/80A,RDS(ON)= 8.5mΩ@VGS= 10V 100V/40A,RDS(ON)= 9.8mΩ@VGS= 6.0V 100V/10A,RDS(ON)= 10mΩ@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L package design APPLICATIONS z DC/DC Converter z Load Switch z SMPS Secondary Side Synchronous Rectifier PIN CONFIGURATION( TO-220-3L ) www.DataSheet4U.com PART MARKING 2009 / 04 / 10 Ver.1 Page 1 1 page SPN3632 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS www.DataSheet4U.com 2009 / 04 / 10 Ver.1 Page 5 5 Page

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PDF SPN3632 Data sheet ( Hoja de datos )