(PDF) SPN4910 Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	SPN4910
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN4910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4910 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES N-Channel 40V/10A,RDS(ON)= 20mΩ@VGS= 10V 40V/ 8A,RDS(ON)= 24mΩ@VGS= 4.5V 40V/ 6A,RDS(ON)= 30mΩ@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design PIN CONFIGURATION(SOP – 8P) www.DataSheet4U.com PART MARKING 2009/07/28 Ver.1 Page 1 1 page SPN4910 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS www.DataSheet4U.com 2009/07/28 Ver.1 Page 5 5 Page

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PDF SPN4910 Data sheet ( Hoja de datos )