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PDF MSB709-RT1 Data sheet ( Hoja de datos )
| Número de pieza | MSB709-RT1 | |
| Descripción | Small Signal Plastic Pnp | |
| Fabricantes | ON Semiconductor | |
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MSB709-RT1
Preferred Device
PNP General Purpose
Amplifier Transistor
Surface Mount
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current – Continuous
Collector Current – Peak
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Value
–60
–45
–7.0
–100
–200
Symbol
PD
TJ
Tstg
Max
200
150
–55 ~ +150
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol Min Max
Collector–Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
V(BR)CEO –45
–
Collector–Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO –60
–
Emitter–Base Breakdown Voltage
(IE = –10 mAdc, IE = 0)
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Collector–Base Cutoff Current
(VCB = –45 Vdc, IE = 0)
V(BR)EBO –7.0 –
ICBO
– –0.1
Collector–Emitter Cutoff Current
(VCE = –10 Vdc, IB = 0)
ICEO
– –100
DC Current Gain (Note 1)
(VCE = –10 Vdc, IC = –2.0 mAdc)
hFE1
210 340
Collector–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
VCE(sat) – –0.5
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Unit
Vdc
Vdc
Vdc
mAdc
nAdc
–
Vdc
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
2
1
3
SC–59
SUFFIX
CASE 318D
MARKING DIAGRAM
AR M
AR = Specific Device Code
M = Date Code
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 5
1
Publication Order Number:
MSB709–RT1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MSB709-RT1.PDF ] | |
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