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IGW15T120 Schematic ( PDF Datasheet ) - Infineon Technologies

Teilenummer IGW15T120
Beschreibung Low Loss IGBT
Hersteller Infineon Technologies
Logo Infineon Technologies Logo 




Gesamt 12 Seiten
IGW15T120 Datasheet, Funktion
IGW15T120
^ TrenchStop Series
Low Loss IGBT in Trench and Fieldstop technology
Approx. 1.0V reduced VCE(sat) compared to BUP313
C
Short circuit withstand time – 10µs
Designed for :
- Frequency Converters
G
E
- Uninterrupted Power Supply
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
IGW25T120
VCE
1200V
IC
15A
VCE(sat),Tj=25°C
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
www.DaGtaaSthee-eet4mUi.tctoemr voltage
Short circuit withstand time1)
VGE = 15V, VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj,max
150°C
Package
TO-247AC
Ordering Code
Q67040-S4515
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
1200
30
15
45
45
±20
10
110
-40...+150
-55...+150
260
Unit
V
A
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Preliminary / Rev. 1 Jul-02






IGW15T120 Datasheet, Funktion
^
td(off)
100ns tf
td(on)
10ns tr
TrenchStop Series
1µs
td(off)
tf
100ns
10ns
IGW15T120
td(on)
tr
1ns
0A
Figure 9.
10A 20A
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=56,
Dynamic test circuit in Figure E)
1ns
10Ω
35Ω 60Ω 85Ω
RG, GATE RESISTOR
110Ω
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
td(off)
www.DataSheet4U.com
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=56,
Dynamic test circuit in Figure E)
7V
6V
5V max.
typ.
4V
min.
3V
2V
1V
0V
-50°C
0°C
50°C
100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.6mA)
Power Semiconductors
6
Preliminary / Rev. 1 Jul-02

6 Page









IGW15T120 pdf, datenblatt
IGW15T120
^ TrenchStop Series
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
www.DataSheet4U.com
Power Semiconductors
12
Preliminary / Rev. 1 Jul-02

12 Page





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