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FQP45N15V2 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FQP45N15V2
Beschreibung 150V N-Channel MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 10 Seiten
FQP45N15V2 Datasheet, Funktion
FQP45N15V2/FQPF45N15V2
150V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
• 45A, 150V, RDS(on) = 0.04@VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 135 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP
GD S
TO-220F
FQPF
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
www.DataSheet4U.com
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
FQP45N15V2 FQPF45N15V2
150
45 45 *
31 31 *
180 180 *
± 30
1124
45
22
4.5
220 66
1.47 0.44
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP45N15V2
0.68
0.5
62.5
FQPF45N15V2
2.25
--
62.5
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004






FQP45N15V2 Datasheet, Funktion
Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
www.DataSheet4U.com
10V
tp
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004

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