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PDF PH975C6 Data sheet ( Hoja de datos )
| Número de pieza | PH975C6 | |
| Descripción | SILICON DIODE | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PH975C6 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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S P E C I F I C AT I O N
Device Name ： SILICON DIODE
Type Name ： PH975C6
Spec. No.
： MS5D2078
DATE
DRAWN APR.-07-‘04
CHECKED APR.-07-‘04
CHECKED APR.-07-‘04
NAME
APPROVED
Fuji Electric Device Technology Co.,Ltd.
MS5D2078 1/12
H04-004-07b
1 page  
www.DataSheet4U.com
Test
No.
1
2
3
4
5
6
7
8
9
10
Test
Items
High Temp.
Storage
Low Temp.
Storage
Temperature
Humidity
Storage
Temperature
Humidity
Bias
Unsaturated
Pressurized
Vapor
Temperature
Cycle
Thermal
Shock
Steady state
Operating
life
Intermittent
Operating
life
High Temp.
Reverse
Bias
Testing methods and Conditions
Temperature :Ｔstg max
Test duration : 1000h
Temperature :Ｔstg min
Test duration : 1000h
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000h
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : VRRM× 0.8
Test duration : 1000h
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48h
High temp. side : Tstg max
Room temp. : 5～35℃
Low temp. side : Tstg min
Duration time : HT 30min,RT 5min LT 30min
Number of cycles : 100 cycles
Fluid : pure water(running water)
High temp. side : 100+0/-5°C
Low temp. side : 0+5/-0°C
Duration time : HT 5min,LT 5min
Number of cycles : 100 cycles
Ta=25±5°C
Rated load
Test duration : 1000h
Tj=Tjmax ～50℃
3min ON, 3min OFF
Test duration : 10000cy
Temperature : Ta=100 °C
Bias Voltage : VR=VRRM duty=1/2
Test duration : 1000h
Reference
Standard
EIAJ
ED4701
B-111A
B-112A
B-121A
test code C
B-122A
test code C
B-123A
test code B
B-131A
B-141A
test code A
D-402
D-403
D-404
Sampling Acceptance
number
number
22
22
22
22
22
22 (0 : 1)
22
22
22
22
Failure Criteria
IR ≦USL x 5
VF≦USL x 1.1
USL : Upper specification Limit
Fuji Electric Device Technology Co.,Ltd.
MS5D2078 5/12
H04-004-03a
5 Page 
www.DataSheet4U.com
160
Current Derating (Io-Tc) (max.)
1000
150
140
130
100
120
110 DC
100
Square wave λ=180°
Sine wave λ=180°
90
Square wave λ=120°
10
80
70
60
Square wave λ=60°
50
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
1
1
Surge Capability (max.)
1000
1000
Junction Capacitance Characteristic (typ.)
10 100
VR Reverse Voltage (V)
1000
Surge Current Ratings (max.)
100
100
10
1 10
1 10 100 1
Number of Cycles at 50Hz
Fuji Electric Device Technology Co.,Ltd.
10
t Time
100
(ms) Sine wave
1000
MS5D2078 11/12
H04-004-03a
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PH975C6.PDF ] | |
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