(PDF) FH1100 Datasheet - SILICON DIODE

Número de pieza	FH1100
Descripción	SILICON DIODE
Fabricantes	Advanced Semiconductor
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No Preview Available ! www.DataSheet4U.com SILICON DIODE FH1100 DESCRIPTION: The ASI FH1100 is a Silicon Diffused Hot Carrier Diode. FEATURES INCLUDE: • QS = 1.6 pC Typ. • C = 1.0 pF Max. @ f = 890 MHz • Hermetic Glass Package MAXIMUM RATINGS IF 10 mA VR 5.0 V PDISS 100 mW @ TC = 25 °C TJ -65 °C to +125 °C TSTG -65 °C to +150 °C Tsoldering +260 °C for 5 Seconds PACKAGE STYLE DO-7 CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS VF IF = 10 mA IR VR = 1.0 V VBR IR = 100 µA CT0 VR = 0 V f = 1.0 MHz NF QS IF = 10 mA f = 890 MHz MINIMUM 5.0 TYPICAL MAXIMUM 550 1.0 UNITS mV µA V 1.0 pF 10 dB 1.6 pC A D V A N C E D S E M I C O N D U C T O R, I N C 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF FH1100 Data sheet ( Hoja de datos )