|
|
PDF PHB110NQ06LT Data sheet ( Hoja de datos )
| Número de pieza | PHB110NQ06LT | |
| Descripción | N-channel TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PHB110NQ06LT (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PHP/PHB110NQ06LT
N-channel TrenchMOS™ logic level FET
Rev. 01 — 04 May 2004
Product data
1. Product profile
1.1 Description
Logic level N-channel enhancement mode field-effect transistor in a plastic package
using TrenchMOS™ technology.
1.2 Features
s Logic level threshold
s Low on-state resistance.
1.3 Applications
s Motors, lamps, solenoids
s DC-to-DC converters
s Uninterruptible power supplies
s General industrial applications.
1.4 Quick reference data
s VDS ≤ 55 V
s Ptot ≤ 200 W
s ID ≤ 75 A
s RDSon ≤ 7 mΩ.
2. Pinning information
Table 1: Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 drain (d)
[1]
mb
mb
3 source (s)
mb mounting base;
connected to
drain (d)
g
MBB076
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
d
s
1 page  
www.DataSheet4U.com
Philips Semiconductors
PHP/PHB110NQ06LT
N-channel TrenchMOS™ logic level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
55 - - V
50 - - V
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
1 1.5 2 V
0.5 - - V
- - 2.2 V
IDSS drain-source leakage current
IGSS gate-source leakage current
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±15 V; VDS = 0 V
- - 1 µA
- - 500 µA
- 2 100 nA
RDSon drain-source on-state resistance
VGS = 10 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 5 V; ID = 25 A; Figure 7 and 8
VGS = 4.5 V; ID = 25 A; Figure 8
-
6.2 7
mΩ
- 12.4 14 mΩ
- 7.1 8.4 mΩ
- - 9.3 mΩ
Dynamic characteristics
Qg(tot) total gate charge
ID = 25 A; VDD = 44 V; VGS = 5 V; Figure 13 -
45 -
nC
Qgs gate-source charge
- 9 - nC
Qgd gate-drain (Miller) charge
- 17 - nC
Ciss
Coss
Crss
td(on)
tr
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 11
VDD = 30 V; RL = 1.2 Ω;
VGS = 5 V; RG = 10 Ω
- 3960 - pF
- 520 - pF
- 205 - pF
- 29 - ns
- 123 - ns
td(off)
turn-off delay time
- 131 - ns
tf fall time
- 86 - ns
Source-drain diode
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
- 0.85 1.2 V
trr reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V - 69 - ns
Qr recovered charge
- 72 - nC
9397 750 13175
Product data
Rev. 01 — 04 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 13
5 Page 
www.DataSheet4U.com
Philips Semiconductors
8. Revision history
Table 6: Revision history
Rev Date
CPCN
Description
01 20040504 -
Product data (9397 750 13175)
PHP/PHB110NQ06LT
N-channel TrenchMOS™ logic level FET
9397 750 13175
Product data
Rev. 01 — 04 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
11 of 13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet PHB110NQ06LT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PHB110NQ06LT | N-channel TrenchMOS logic level FET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |