|
|
PDF STK24N4LLF5 Data sheet ( Hoja de datos )
| Número de pieza | STK24N4LLF5 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STK24N4LLF5 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
Features
STK24N4LLF5
N-channel 40 V, 0.0046 Ω, 24 A, PolarPAK®
STripFET™V Power MOSFET
Preliminary Data
Type
STK24N4LLF5
VDSS
40 V
RDS(on)
max
RDS(on)*Qg
< 0.0055 Ω 96 nC*mΩ
■ Ultra low top and bottom junction to case
thermal resistance
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ Fully encapsulated die
■ 100% matte tin finish (in compliance with the
2002/95/EC european directive)
■ High avalanche ruggedness
■ PolarPAK® is a trademark of VISHAY
Application
■ Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
PolarPAK®
Figure 1. Internal schematic diagram
Bottom View
Top View
Table 1. Device summary
Order code
STK24N4LLF5
Marking
244L5
Package
PolarPAK®
Packaging
Tape and reel
January 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
www.st.com
12
1 page  
www.DataSShTeeKt42U4.Nco4mLLF5
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD= 15 V, ID= 12 A,
RG=4.7 Ω, VGS=4.5 V
(see Figure 2)
VDD=15 V, ID= 12 A,
RG=4.7 Ω, VGS=4.5 V
(see Figure 2)
Min. Typ. Max. Unit
TBD
TBD
ns
ns
TBD
TBD
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD(2) Forward on Voltage
ISD= 24 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 24 A, di/dt = 100 A/µs,
VDD=20 V, Tj=150 °C
(se Figure 7)
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
24 A
96 A
1.1 V
TBD
TBD
TBD
ns
nC
A
5/12
5 Page 
www.DataSShTeeKt42U4.Nco4mLLF5
5 Revision history
Table 9. Document revision history
Date
Revision
19-Jan-2009
1 First release
Revision history
Changes
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STK24N4LLF5.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STK24N4LLF5 | Power MOSFET ( Transistor ) | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |