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PDF STGP14N60D Data sheet ( Hoja de datos )

Número de pieza STGP14N60D
Descripción 14 A - 600 V - Short Circuit Rugged IGBT
Fabricantes ST Microelectronics 
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STGF14N60D
STGP14N60D
14 A - 600 V - short circuit rugged IGBT
Preliminary Data
Features
Low on-voltage drop (VCE(sat))
Operating junction temperature up to 175 °C
Low Cres / Cies ratio (no cross conduction
susceptibility)
Tight parameter distribution
Ultra fast soft recovery antiparallel diode
Short circuit rugged
3
2
1
TO-220FP
3
2
1
TO-220
Applications
Motor drives
High frequency inverters
SMPS and PFC in both hard switch and
resonant topologies
Figure 1. Internal schematic diagram
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Table 1. Device summary
Order codes
Marking
STGF14N60D
GF14N60D
STGP14N60D
GP14N60D
Package
TO-220FP
TO-220
Packaging
Tube
Tube
February 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
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Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 7 A
RG= 10 , VGE= 15 V,
(see Figure 2)
VCC = 390 V, IC = 7 A
RG= 10 , VGE= 15 V,
TC= 125 °C
(see Figure 2)
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390 V, IC = 7 A,
RGE = 10 , VGE = 15 V
(see Figure 2)
VCC = 390 V, IC = 7 A,
RGE = 10 , VGE = 15 V
TC= 125 °C
(see Figure 2)
Min. Typ. Max. Unit
TBD
TBD
TBD
ns
ns
A/µs
TBD
TBD
TBD
ns
ns
A/µs
TBD
TBD
TBD
ns
ns
ns
TBD
TBD
TBD
ns
ns
ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
VCC = 390 V, IC = 7 A
RG= 10 , VGE= 15 V,
(see Figure 2)
VCC = 390 V, IC = 7 A
RG= 10 , VGE= 15 V,
TC= 125 °C
(see Figure 2)
Min Typ. Max Unit
TBD
TBD
TBD
µJ
µJ
µJ
TBD
TBD
TBD
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and DIODE are at the same
temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current.
Table 8. Collector-emitter diode
Symbol
Parameter
Test conditions
VF Forward on-voltage
trr Reverse recovery time
Qrr Reverse recovery charge
Irrm Reverse recovery current
trr Reverse recovery time
Qrr Reverse recovery charge
Irrm Reverse recovery current
IF = 7 A
IF = 7 A, TC= 125 °C
IF = 7 A, VR = 40 V,
di/dt = 100 A/µs
(see Figure 5)
IF = 7 A, VR = 40 V,
TC= 125 °C,
di/dt = 100 A/µs
(see Figure 5)
Min Typ. Max Unit
1.8 2.1
1.3
V
V
37 ns
40 nC
2.1 A
61 ns
98 nC
3.2 A
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