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PDF MW6IC2420NBR1 Data sheet ( Hoja de datos )
| Número de pieza | MW6IC2420NBR1 | |
| Descripción | RF LDMOS Integrated Power Amplifier | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF LDMOS Integrated
Power Amplifier
The MW6IC2420NB integrated circuit is designed with on - chip matching
that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to
32 Volt operation and covers all typical industrial, scientific and medical
modulation formats.
Driver Applications
• Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA,
IDQ2 = 370 mA, Pout = 20 Watts
Power Gain — 19.5 dB
Power Added Efficiency — 27%
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW
Pout.
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW6IC2420N
Rev. 0, 3/2007
MW6IC2420NBR1
2450 MHz, 20 W, 28 V
CW
RF LDMOS INTEGRATED POWER
AMPLIFIER
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
VDS1
GND 1
VDS1
NC
2
3
NC 4
16 GND
15 NC
NC 5
RFin
RFout/VDS2
RFin 6
14 RFout /
VDS2
NC 7
VGS1
VGS2
VDS1
Quiescent Current
Temperature Compensation
VGS1
VGS2
VDS1
GND
8
9
10
11
13 NC
12 GND
(Top View)
Figure 1. Functional Block Diagram
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6IC2420NBR1
1
1 page  
www.DataSheet4U.com
VDS1
MW6IC2420
Rev. 0
C1
C14 C15
C5
C13
VDS2
C2
C11
C6
C8
C7
C9
C10
R1 R2
C3
VGS
C4
C12
Figure 4. MW6IC2420NBR1 Test Circuit Component Layout — 2450 MHz
RF Device Data
Freescale Semiconductor
MW6IC2420NBR1
5
5 Page 
PRODUCT DOCUMENTATION
www.DataSheet4U.com
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
Date
Mar. 2007
• Initial Release of Data Sheet
Description
RF Device Data
Freescale Semiconductor
MW6IC2420NBR1
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MW6IC2420NBR1.PDF ] | |
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