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PDF PMEG4002EJ Data sheet ( Hoja de datos )
| Número de pieza | PMEG4002EJ | |
| Descripción | 200 MA Low Vf MEGA Schottky Barrier Rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG4002EJ
200 mA low VF MEGA Schottky barrier rectifier
Rev. 01 — 15 May 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD323F (SC-90) small and
flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Average forward current: IF(AV) ≤ 0.2 A
I Reverse voltage: VR ≤ 40 V
I Low forward voltage
I AEC-Q101 qualified
I Small and flat lead SMD plastic package
1.3 Applications
I Low voltage rectification
I High efficiency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I Ultra high-speed switching
I Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ≤ 130 °C [1] - - 0.2
Tsp ≤ 145 °C
- - 0.2
VR reverse voltage
- - 40
VF forward voltage
IR reverse current
IF = 0.2 A
VR = 40 V
- 520 600
- 0.7 10
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
µA
1 page  
w w wN.XDPa St aemS hiceoentd4uUct.ocrosm
PMEG4002EJ
200 mA low VF MEGA Schottky barrier rectifier
103 006aab478
Zth(j-a)
(K/W)
duty cycle =
102 1
0.5
0.25
0.1
10
0.02
1
10−5
0
0.75
0.33
0.2
0.05
0.01
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
IF = 200 mA
IR
reverse current
VR = 10 V
VR = 25 V
VR = 40 V
Cd diode capacitance f = 1 MHz
VR = 1 V
VR = 10 V
trr reverse recovery time
Min Typ
- 190
- 250
- 320
- 440
- 520
- 0.2
- 0.3
- 0.7
-
-
[1] -
14
6
5
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
220
290
360
500
600
0.3
0.5
10
-
-
-
Unit
mV
mV
mV
mV
mV
µA
µA
µA
pF
pF
ns
PMEG4002EJ_1
Product data sheet
Rev. 01 — 15 May 2009
© NXP B.V. 2009. All rights reserved.
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PMEG4002EJ
200 mA low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9. Revision history
Document ID
Release date
PMEG4002EJ_1
20090515
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMEG4002EJ_1
Product data sheet
Rev. 01 — 15 May 2009
© NXP B.V. 2009. All rights reserved.
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