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PDF G4BC20F Data sheet ( Hoja de datos )
| Número de pieza | G4BC20F | |
| Descripción | IRG4BC20F | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de G4BC20F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 91602A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20F
Fast Speed IGBT
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
16
9.0
64
64
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
2.1
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000
1 page  
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1000
800
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600 Cies
400
200
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC20F
20
VCC = 400V
I C = 9.0A
16
12
8
4
0
0 5 10 15 20 25 30
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.72 VCC = 480V
VGE = 15V
TJ = 25 ° C
0.71 IC = 9.0A
0.70
0.68
0.67
0.66
0
10 20 30 40
RG , Gate Resistance (OΩhm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10 RG = 50OΩhm
VGE = 15V
VCC = 480V
1
IC = 18 A
IC = 9.09 AA
IC = 4.5 A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet G4BC20F.PDF ] | |
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