|
|
PDF STP13NM60N Data sheet ( Hoja de datos )
| Número de pieza | STP13NM60N | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STP13NM60N (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
STD13NM60N
STF13NM60N, STP13NM60N
N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET
DPAK, TO-220FP, TO-220
Features
Type
STD13NM60N
STF13NM60N
STP13NM60N
VDSS
(@Tjmax)
650 V
650 V
650 V
RDS(on)
max
< 0.36 Ω
< 0.36 Ω
< 0.36 Ω
ID
11 A
11 A
11 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220FP
3
1
DPAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order code
STD13NM60N
STF13NM60N
STP13NM60N
Marking
13NM60N
13NM60N
13NM60N
Package
DPAK
TO-220FP
TO-220
3#
Packaging
Tape and reel
Tube
Tube
February 2009
Rev 1
1/16
www.st.com
16
1 page  
www.DataSShTeeDt41U3.NcoMm60N, STF13NM60N, STP13NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 5.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Min. Typ. Max. Unit
3 ns
8 ns
30 ns
10 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 11 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
11
44
1.5
230
2
18
290
190
17
A
A
V
ns
µC
A
ns
µC
A
5/16
5 Page 
www.DataSShTeeDt41U3.NcoMm60N, STF13NM60N, STP13NM60N
Package mechanical data
DIM.
A
A1
A2
b
b4
c
c2
D
D1
E
E1
e
e1
H
L
L1
L2
L4
R
V2
TO-252 (DPAK) mechanical data
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
1
0.60
0o
mm.
typ
5.10
4.70
2.28
2.80
0.80
0.20
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
1
8o
0068772_G
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STP13NM60N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STP13NM60N | Power MOSFETs | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |