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PDF T810H Data sheet ( Hoja de datos )
| Número de pieza | T810H | |
| Descripción | High temperature 8 A sensitive TRIACs | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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T810H
High temperature 8 A sensitive TRIACs
Features
■ Medium current TRIAC
■ Logic level sensitive TRIAC
■ 150 °C max. Tj turn-off commutation
■ Clip bounding
■ RoHS (2002/95/EC) compliant packages
Applications
■ The T810H is designed for the control of AC
actuators in appliances and industrial systems.
■ The multi-port drive of the microcontroller can
control the multiple loads of such appliances
and systems through these sensitive gate
TRIACs.
Description
Specifically designed to operate at 150 °C, the
new 8 A T810H TRIACs provide an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost
effectiveness when compared to electro-
mechanical solutions.
Based on ST logic level technology, they offer an
IGT lower than 10 mA and specified minimal
commutation and high noise immunity levels valid
up to the Tj max.
A2
G
A1
A2
A2
A2 G
A1
D2PAK
T810H-6G
G
A2
A1
TO-220AB
T810H-6T
Table 1. Device summary
Symbol
Value
IT(RMS)
VDRM/VRRM
IGT MAX
8
600
10
Unit
A
V
mA
May 2009
Doc ID 15714 Rev 1
1/10
www.st.com
10
1 page  
www.DatTa8S1h0eHet4U.com
Characteristics
Figure 9.
On-state characteristics (maximum Figure 10. Relative variation of critical rate of
values)
decrease of main current versus
junction temperature
ITM (A)
100
(dI/dt)C [Tj] / (dI/dt)c [Tj=150 °C]
15
Tj max
Vto = 0.80 V
Rd = 55 mΩ
14
13
12
11
10
9
10
Tj=150 °C
8
7
6
5
Tj=25 °C
4
3
VTM (V)
1
2
1 Tj(°C)
0
012345
25 50 75 100 125 150
Figure 11. Relative variation of critical rate of Figure 12. Relative variation of static dV/dt
decrease of main current versus
immunity versus junction
reapplied dV/dt (typical values)
temperature
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
4
3
2
1
0
0.1
(dV/dt)C (V/µs)
1.0 10.0
100.0
dV/dt [Tj] / dV/dt [Tj=150 °C]
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
25 50 75
Tj(°C)
100
VD=VR=400 V
125 150
Figure 13. Variation of leakage current versus Figure 14. Acceptable case to ambient thermal
junction temperature for different
resistance versus repetitive peak
values of blocking voltage
off-state voltage
IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=150°C; 600V]
1.0E+00
VDRM=VRRM=600 V
1.0E-01
VDRM=VRRM=400 V
1.0E-02
VDRM=VRRM=200 V
1.0E-03
1.0E-04
Tj(°C)
25 50 75 100 125 150
Rth(c-a) (°C/W)
60
55
50
45
40
35
30
25
20
15
10
5
0
200
300
Rth(j-c)=1.6 °C/W
TJ=150 °C
VAC PEAK(V)
400
500
600
Doc ID 15714 Rev 1
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet T810H.PDF ] | |
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