PI3033B Datasheet PDF - AMI SEMICONDUCTOR
| Part Number | PI3033B | |
| Description | Contact Image Sensor | |
| Manufacturers | AMI SEMICONDUCTOR | |
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Division of
Semiconductor
REVISION NUMBER: REV B
DATE: 03/18/05
PAGES: Page 1 of 13
PI3033B Contact Image Sensor
Preliminary Data Sheet
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Preliminary PI3033B datasheet
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Electro-Optical Characteristics (25o C)
The electro-optical characteristics of PI3033B imaging sensor chip are listed in Table 2. These values
are measured at 25o C.
Parameters
Number of Photo-elements
Pixel-to-pixel spacing
Line scanning rate
Clock frequency
Output voltage
Output voltage non-uniformity
Dark output voltage
Dark output non-uniformity
Adjacent Pixel non-uniformity
Chip-to-chip non-uniformity
Symbols
Tint (1)
Fclk (2)
Vpavg (3)
Up (4)
Vd (5)
Ud (6)
Upadj (7)
Ucc (8)
Typical
64
125
864
2.0
1.0
± 7.5
<20
<10
<7.5
± 7.5
Units
elements
µm
µs/line
MHz
V
%
mV
mV
%
%
Notes
See note 2 for higher clock
speed. (maximum 5 MHz)
Exp = 1.8 X 10 –2 µJ/cm 2
Note 5 & 3
Note 6 & 3
Table 2. Electro-Optical Characteristic
Notes: (1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Tint stands for the line scanning rate or the integration time. It is determined by
the time interval between two start pulses.
Fclk stands for the input clock frequency. For Fclk > 2.0 MHz see note 3 and the
section Video Output Response Under Exposure.
Vpavg = ∑Vp(n)/Npixels (average level in one line scan).
Where Vp(n) is the amplitude of nth pixel in the sensor chip and
Npixels is the total number of pixels in sensor chip. Vpavg is converted from
impulse current video pixel into a voltage output. See Figure 4, Video Pixel
Output in section Output Circuit Of The Image Sensor and Figure 5, Video
Output Test and Application Circuit in section Signal Conversion Circuit on page
6 and 7.
Exp = LP x Tint, where LP is light power (Yellow-Green) and Tint is as defined
above. See Figure 6, Vpavg Output versus Light Exposure in section Video
Output Response Under Exposure, on page 8.
Up is the uniformity specification, measured under a uniform exposing light
exposure. Up = [Vp(max) - Vpavg] / Vpavg x 100% or [Vpavg - Vp(min)] / Vpavg}
x 100%, whichever is greater.
Where Vp(max) is the maximum pixel output voltage in the light.
Vp(min) is the minimum pixel output voltage in the light.
Vd = ∑Vp(n)/Npixels. Where Vp(n) is the pixels signal amplitude of the nth pixel
of the sensor. Dark is where the sensor is placed in the dark environment.
Ud = Vdmax – Vdmin. Dark is same definition as above.
Upadj = MAX[ | (Vp(n) - Vp(n+l) | / Vp(n)) x 100%. Upadj is the nonuniformity in
percentage. It is the amplitude difference between two neighboring pixels.
Ucc is the uniformity specifications, measured among the good die on the wafer.
Under uniform light exposure the sensors are measured and calculated with
following algorithm: Vpavg of all the good dies on the wafer are averaged and
assigned VGpavg. Then the die with maximum Vpavg is assigned Vpavg(max),
Page 5 of 13 Date: 03/18/05
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| Information | Total 13 Pages | |
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| Download | [ PI3033B.PDF Datasheet ] | |
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