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NJG1125PB5 Schematic ( PDF Datasheet ) - JRC

Teilenummer NJG1125PB5
Beschreibung Triple LNA
Hersteller JRC
Logo JRC Logo 




Gesamt 30 Seiten
NJG1125PB5 Datasheet, Funktion
www.DataSheet4U.com
NJG1125PB5
W-CDMA Triple LNA GaAs MMIC
QGENERAL DESCRIPTION
NJG1125PB5 is a Triple band LNA IC designed for W-CDMA
/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band.
This IC has a LNA pass-through function to select high gain
mode or low gain mode.
An ultra small and ultra thin package of FFP16–B5 is adopted.
QPACKAGE OUTLINE
NJG1125PB5
QFEATURES
OLow voltage operation
OLow ctl voltage operation
OLow current consumption
OPackage
+2.85V typ.
+1.85V typ.
2.4mA typ. @High Gain Mode
0uA typ. @Low Gain Mode
FFP16-B5 (Package size: 2.0 x 2.0 x 0.65mm typ.)
[High gain mode]
OHigh gain
OLow noise figure
OHigh Input IP3
[Low gain mode]
OGain
OHigh Input IP3
17.0dB typ.
16.5dB typ.
17.5dB typ.
1.75dB typ.
1.50dB typ.
1.65dB typ.
0dBm typ.
-1dBm typ.
+1dBm typ.
@fRF=2140MHz
@fRF=885MHz
@fRF=1860MHz
@fRF=2140MHz
@fRF=885MHz
@fRF=1860MHz
@ fRF=2140.0+2140.1MHz, Pin=-30dBm
@fRF=885.0+885.1MHz, Pin=-30dBm
@fRF=1860.0+1860.1MHz, Pin=-30dBm
-8.0dB typ.
-6.5dB typ.
-9.0dB typ.
+14dBm typ.
+12dBm typ.
+14dBm typ.
@fRF=2140MHz
@fRF=885MHz
@fRF=1860MHz
@fRF=2140.0+2140.1MHz, Pin=-16dBm
@fRF=885.0+885.1MHz, Pin=-20dBm
@fRF=1860.0+1860.1MHz, Pin=-16dBm
QPIN CONFIGURATION
(Top View)
RFIN1 12
GND 11
VCTL1 10
VCTL2 9
GND
13
RFIN2
14
GND
15
Logic
Circuit
RFIN3
16
Bias
Circuit
800MHz Band
RFOUT1
8
Bias
Circuit
2.1GHz Band
GND
7
RFOUT2
6
1.7GHz Band
Bias
Circuit
GND
5
Pin Connection
1. GND
2. VINV
3. VCTL3 (Gain Sel.)
4. RFOUT3 (1.7GHz)
5. GND
6. RFOUT2 (2.1GHz)
7. GND
8. RFOUT1 (800MHz)
9. VCTL2 (Band Sel.)
10. VCTL1 (Band Sel.)
11. GND
12. RFIN1 (800MHz)
13. GND
14. RFIN2 (2.1GHz)
15. GND
16. RFIN3 (1.7GHz)
1 Pin INDEX
1 GND
2 VINV
3 VCTL3
4 RFOUT3
Note: Specifications and description listed in this catalog are subject to change without prior notice.
Ver.2006-07-21
-1-






NJG1125PB5 Datasheet, Funktion
NJG1125PB5
www.DataSheet4U.com
QTERMINAL INFORMATION
No. SYMBOL
1 GND Ground terminal. (0V)
DESCRIPTION
2 VINV Inverter voltage supplies terminal.
Control voltage supply terminal. The high level voltage of this terminal
3 VCTL3 selects High Gain Mode. The low level voltage of this terminal selects Low
Gain Mode.
4
RFOUT3
Output terminal of 1.7GHz band. This terminal is also the power supply
terminal of the LNA, please use inductor (L10) to connect power supply.
5 GND Ground terminal. (0V)
6
RFOUT2
Output terminal of 2.1GHz band. This terminal is also the power supply
terminal of the LNA, please use inductor (L6) to connect power supply.
7 GND Ground terminal. (0V)
8
RFOUT1
Output terminal of 800MHz band. This terminal is also the power supply
terminal of the LNA, please use inductor (L3) to connect power supply.
9 VCTL2 Control voltage supply terminal. The frequency band (2Ghz / 800MHz /
10 VCTL1 1.7GHz) selects by 2bit control signal. (Please refer to truth table.)
11 GND Ground terminal. (0V)
RF input terminal of 800MHz band. The RF signal is input through
12 RFIN1 external matching circuit connected to this terminal. The DC blocking
capacitor is not required.
13 GND Ground terminal. (0V)
RF input terminal of 2.1GHz band. The RF signal is input through external
14 RFIN2 matching circuit connected to this terminal. The DC blocking capacitor is
not required.
15 GND Ground terminal. (0V)
RF input terminal of 1.7GHz band. The RF signal is input through external
16 RFIN3 matching circuit connected to this terminal. The DC blocking capacitor is
not required.
CAUTION
1) Ground terminal (1, 5, 7, 11, 13, 15) should be connected to the ground plane as low
inductance as possible.
-6-

6 Page









NJG1125PB5 pdf, datenblatt
NJG1125PB5
www.DataSheet4U.com
Q ELECTRICAL CHARACTERISTICS (2.1GHz Band High Gain Mode)
2.1GHz@High Gain
Gain, NF vs. Temperature
20
4.5
19 Gain
18
4
3.5
17 3
16 2.5
15 2
NF
14 1.5
13 1
12
-50
-25 0 25 50 75
Ambient Temperature (oC)
0.5
100
Condition
f=2140MHz,
VDD= VINV =2.7V,
VCTL1=0V, VCTL2=0V, VCTL3=1.85V
2.1GHz@High Gain
OIP3, IIP3 vs. Temperature
20.0
10.0
OIP3
15.0
5.0
10.0
0.0
IIP3
5.0
-50
-25 0
25 50 75
Ambient Temperature (oC)
-5.0
100
Condition
f1=2140MHz, f2=f1+100kHz,
Pin=-30dBm,
VDD= VINV =2.7V
VCTL1=0V, VCTL2=0V, VCTL3=1.85V
2.1GHz@High Gain
P-1dB(IN) vs. Temperature
-6
-8
-10
-12
P-1dB(IN)
-14
-16
-18
-20
-22
-50
-25 0 25 50 75
Ambient Temperature (oC)
100
Condition
f=2140MHz,
VDD= VINV =2.7V
VCTL1=0V, VCTL2=0V, VCTL3=1.85V
2.1GHz@High Gain
VSWR vs. Temperature
4
3.5
3
VSWRi
VSWRo
2.5
2
1.5
1
0.5
0
-50 -25
0
25 50 75 100
Ambient Temperature (oC)
Condition
f=2140MHz,
VDD= VINV =2.7V
VCTL1=0V, VCTL2=0V, VCTL3=1.85V
- 12 -

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