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Número de pieza | LET9045C | |
Descripción | RF power transistor | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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LET9045C
RF power transistor
the LdmoST family
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 45 W with 18.5 dB gain @ 960 MHz
■ BeO free package
■ In compliance with the 2002/95/EC european
directive
Description
The LET9045C is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The LET9045C is designed for high gain
and broadband performance operating in
common source mode at 28 V. It is ideal for base
station applications requiring high linearity.
M243
epoxy sealed
Figure 1. Pin out
1. Drain
2. Gate
1
3
2
3. Source
Table 1.
Device summary
Order code
LET9045C
Package
M243
Branding
LET9045C
March 2009
Rev 1
1/10
www.st.com
10
1 page LET9045C
4 Typical performance
Typical performance
www.datashFeiegt4uur.eco3m.
Gain vs output power and bias
Figure 4.
current, freq = 960 MHz, Vdd = 28 V
Gain and efficiency vs output
power, freq = 960 MHz,
Vdd = 28 V, Idq = 300 mA
'AIN
%&&
,GT P$
,GT P$
,GT P$
,GT P$
,GT P$
3287 :DWW
!-V
0). 7ATT
!-V
Table 7.
Output power vs supply voltage
freq = 960 MHz, Vdd = 28 V,
Idq = 300 mA
0). 7
0). 7
0). 7
0). 7
0). 7
6$$ 6OLT
!-V
5/10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet LET9045C.PDF ] |
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