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PDF MRF5S19150HSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF5S19150HSR3 | |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
www.datas•heTety4pui.ccaolm2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ =
1400 mA, Avg., Pout = 32 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — - 36.5 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 50 dB in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF5S19150H
Rev. 2, 5/2006
MRF5S19150HR3
MRF5S19150HSR3
1930- 1990 MHz, 32 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19150HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19150HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +65
- 0.5, +15
427
2.44
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ TC = 25°C
Derate above 25°C
Tstg - 65 to +150
TC 150
TJ 200
CW 120
0.76
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 32 W CW
RθJC
0.41
0.44
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
W
W/°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S19150HR3 MRF5S19150HSR3
1
1 page  
www.datasheet4u.com
TYPICAL CHARACTERISTICS
15 40
14 Gps
13 ηD
35
30
12 25
11
10 IRL
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1400 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
20
−30
9 −35
8 IM3
7
ACPR
6
1.228 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−40
−45
−50
5 −55
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
@ Pout = 32 Watts Avg.
−10
−20
−30
−40
−50
−60
16
IDQ = 2100 mA
15 1700 mA
1400 mA
14
1050 mA
13
700 mA
12 VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
11
1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−15
VDD = 28 Vdc
−20 f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
−25
−30 IDQ = 2100 mA
1700 mA
−35
−40
700 mA
−45
−50
−55
1
1050 mA
10
1400 mA
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation versus
Output Power
−20
−25
−30 3rd Order
−35
−40 5th Order
−45
7th Order
−50
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1400 mA
−55 Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−60
0.1 1
10
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
RF Device Data
Freescale Semiconductor
59
58
P3dB = 53.71 dBm (234.96 W)
57
56
55
P1dB = 53.01 dBm (199.99 W)
54
53
52
51 VDD = 28 Vdc, IDQ = 1400 mA
50
Pulsed CW, 8 μsec (on), 1 msec (off)
f = 1960 MHz
49
35 36 37 38 39 40 41 42 43 44 45
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S19150HR3 MRF5S19150HSR3
5
5 Page 
PACKAGE DIMENSIONS
B
B
(FLANGE)
K
www.datasheet4u.com
H
E
A
G
1
2X Q
bbb M T A M B M
3
2
D
bbb M T A M B M
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
A
(FLANGE)
C
T
SEATING
PLANE
F
CASE 465B - 03
ISSUE D
NI - 880
MRF5S19150HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.535 0.545
C 0.147 0.200
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.872 0.888
N 0.871 0.889
Q .118 .138
R 0.515 0.525
S 0.515 0.525
aaa 0.007 REF
bbb 0.010 REF
ccc 0.015 REF
MILLIMETERS
MIN MAX
33.91 34.16
13.6 13.8
3.73 5.08
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
22.15 22.55
19.30 22.60
3.00 3.51
13.10 13.30
13.10 13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
B
1
B
(FLANGE)
K2
D
bbb M T A M B M
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
H
C
E
A
A
(FLANGE)
T
SEATING
PLANE
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.905 0.915
B 0.535 0.545
C 0.147 0.200
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.872 0.888
N 0.871 0.889
R 0.515 0.525
S 0.515 0.525
aaa 0.007 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
22.99 23.24
13.60 13.80
3.73 5.08
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
22.15 22.55
19.30 22.60
13.10 13.30
13.10 13.30
0.178 REF
0.254 REF
0.381 REF
CASE 465C - 02
ISSUE D
NI - 880S
MRF5S19150HSR3
RF Device Data
Freescale Semiconductor
MRF5S19150HR3 MRF5S19150HSR3
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF5S19150HSR3.PDF ] | |
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