|
|
PDF MRF9085LSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF9085LSR3 | |
| Descripción | RF POWER MOSFETs | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRF9085LSR3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9085/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
www.datasfrheeqeut4eun.ccoiems from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
• TISy-p9ic7alCCDDMMAAPPiloetr,foSrymnacn, cPea@gin8g8, 0TrMafHficz,C2o6dVeoslt8s,TIhDrQou=g7h0103mA
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: - 45.0 dBc @ 30 kHz BW
1.98 MHz: - 60.0 dBc @ 30 kHz BW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9085LR3
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF9085LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF9085LSR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
65
- 0.5, +15
250
1.43
Vdc
Vdc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg - 65 to +150 °C
TJ 200 °C
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
RθJC 0.7 °C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9085LR3 MRF9085LSR3
1
1 page  
www.datasheet4u.com
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
19 50
18 Gps
17 h
16
15
14
IMD
13
VDD = 26 Vdc
Pout = 90 W (PEP)
IDQ = 700 mA
Two−Tone, 100 kHz Tone Spacing
45
40
35
−28
−30
−32
12
VSWR
−34
11 −36
860 865 870 875 880 885 890 895 900
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
2.00
1.75
1.50
1.25
1.00
19
Gps
17
60
40
15
h
20
13
VDD = 26 Vdc
11
IDQ = 700 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
9
IMD
0
−20
−40
7
1
10 100
Pout, OUTPUT POWER (WATTS) PEP
−60
Figure 4. Power Gain, Efficiency, IMD versus
Output Power
−10
VDD = 26 Vdc
−20
IDQ = 700 mA
f1 = 800.0 MHz
f2 = 800.1 MHz
−30
3rd Order
5th Order
−40
7th Order
−50
−60
−70
1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion Products
versus Output Power
18
Gps
17
60
50
16 40
15
14
13 h
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
Single Tone
30
20
10
12
1
10 100
Pout, OUTPUT POWER (WATTS) CW AVG.
0
Figure 6. Power Gain, Efficiency versus Output
Power
19
Gps
17
h
15
13
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
40
20
0
−20
11
750 kHz
9
1.98 MHz
7
1
10
Pout, OUTPUT POWER (WATTS) AVG.
−40
−60
−80
Figure 7. Power Gain, Efficiency, ACPR versus
Output Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9085LR3 MRF9085LSR3
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF9085LSR3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF9085LSR3 | RF POWER MOSFETs | Motorola Semiconductors |
| MRF9085LSR3 | RF POWER MOSFETs | Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |