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LE28C1001M Schematic ( PDF Datasheet ) - Sanyo Semicon Device

Teilenummer LE28C1001M
Beschreibung 1MEG (131072 words x 8 bits) Flash Memory
Hersteller Sanyo Semicon Device
Logo Sanyo Semicon Device Logo 




Gesamt 14 Seiten
LE28C1001M Datasheet, Funktion
Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
Preliminary
1MEG (131072 words × 8 bits) Flash Memory
Overview
The LE28C1001M, T series ICs are 1 MEG flash memory
products that feature a 131072-word × 8-bit organization
and 5 V single-voltage power supply operation. CMOS
peripheral circuits are adopted for high speed, low power
dissipation, and ease of use. A 128-byte page rewrite
function provides rapid data rewriting.
Features
• Highly reliable 2-layer polysilicon CMOS flash
EEPROM process
• Read and write operations using a 5 V single-voltage
power supply
• Fast access time: 90, 120, and 150 ns
• Low power dissipation
— Operating current (read): 30 mA (maximum)
— Standby current:
20 µA (maximum)
• Highly reliable read/write
— Erase/write cycles:
104/103 cycles
— Data retention:
10 years
• Address and data latches
• Fast page rewrite operation
— 128 bytes per page
— Byte/page rewrite time: 5 ms (typical)
— Chip rewrite time:
5 s (typical)
• Automatic rewriting using internally generated Vpp
• Rewrite complete detection function
— Toggle bit
— Data polling
• Hardware and software data protection functions
• All inputs and outputs are TTL compatible.
• Pin assignment conforms to the JEDEC byte-wide
EEPROM standard.
• Package
SOP 32-pin (525 mil) plastic package : LE28C1001M
TSOP 32-pin (8 × 20 mm)plastic package : LE28C1001T
Package Dimensions
unit: mm
3205-SOP32
[LE28C1001M]
unit: mm
3224-TSOP32
[LE28C1001T]
SANYO: SOP32
SANYO: TSOP32 (TYPE-I)
These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
D3096HA (OT)/N3095HA (OT) No. 5129-1/14






LE28C1001M Datasheet, Funktion
LE28C1001M, T-90/12/15
Specifications
Absolute Maximum Ratings at Ta 25°C
Parameter
Symbol
Ratings
Supply voltage
Input pin voltage
DQ pin voltage
A9 pin voltage
Allowable power dissipation
VCC
VIN
VOUT
VA9
Pd max
–0.5 to +6.0
–0.5 to VCC + 0.5
–0.5 to VCC + 0.5
–0.5 to +14.0
600
Operating temperature
Topr
0 to +70
Storage temperature
Tstg
–65 to +150
Note: 1. The device may be destroyed by the application of stresses in excess of the absolute maximum ratings.
2. –1.0 V to VCC + 1.0 V for pulses less than 20 ns
3. –1.0 V to +14 V for pulses less than 20 ns
DC Recommended Operating Ranges at Ta = 0 to +70°C
Parameter
Supply voltage
Input low-level voltage
Input high-level voltage
Symbol
VCC
VIL
VIH
min
4.5
2.0
typ
5.0
DC Electrical Characteristics at Ta = 0 to +70°C, VCC = 5 V ± 10%
Parameter
Current drain during read
Current drain during write
TTL standby current
CMOS standby current
Input leakage current
Output leakage current
Output low-level voltage
Output high-level voltage
Symbol
ICCR
ICCW
ISB1
ISB2
ILI
ILO
VOL
VOH
Conditions
CE = OE = VIL, WE = VIH, all DQ pins open,
address inputs = VIH or VIL, operating frequency =
1/tRC (minimum), VCC = VCC max
CE = WE = VIL, OE = VIH, VCC = VCC max
CE = OE = WE =VIH,VCC = VCC max
CE = OE = WE =VCC – 0.3 V,
VCC = VCC max
VIN = VSS to VCC, VCC = VCC max
VIN = VSS to VCC, VCC = VCC max
IOL = 2.1 mA, VCC = VCC min
IOH = –400 µA, VCC = VCC min
min
2.4
Input/output Capacitances at Ta = 25°C, VCC = 5 V ± 10%, f = 1 MHz
Parameter
Input/output capacitance
Input capacitance
Symbol
CDQ
CIN
VDQ = 0 V
VIN = 0 V
Conditions
Power on Timing
Parameter
Time from power on until first read operation
Time from power on until first write operation
Symbol
tPU-READ
tPU-WRITE
Conditions
Unit Note
V1
V 1, 2
V 1, 2
V 1, 3
mW 1, 4
°C 1
°C 1
max Unit
5.5 V
0.8 V
V
typ max Unit
30 mA
50 mA
3 mA
20 µA
10 µA
10 µA
0.4 V
V
max Unit
12 pF
6 pF
max
100
5
Unit
µs
ms
No. 5129-6/14

6 Page









LE28C1001M pdf, datenblatt
LE28C1001M, T-90/12/15
Figure 11 Write Operating State Detection
No. 5129-12/14

12 Page





SeitenGesamt 14 Seiten
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