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PDF AOT9610 Data sheet ( Hoja de datos )
| Número de pieza | AOT9610 | |
| Descripción | 12A N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AOT9610 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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www.datasheet4u.AcoOm T12N60 / AOTF12N60
600V, 12A N-Channel MOSFET
formerly engineering part number AOT9610/AOTF9610
General Description
The AOT12N60 & AOTF12N60 have been fabricated
using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance
and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
VDS (V) = 700V @ 150°C
ID = 12A
RDS(ON) < 0.55 Ω (VGS = 10V)
100% UIS Tested!
100% R g Tested!
C iss , C oss , C rss Tested!
TO-220
Top View
TO-220F
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT12N60 AOTF12N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
12
8.1
48
5.5
450
900
12*
8.1*
Peak diode recovery dv/dt
dv/dt
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
223 50
1.8 0.4
Junction and Storage Temperature Range TJ, TSTG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter
Symbol
AOT12N60 AOTF12N60
Maximum Junction-to-Ambient A,D
RθJA
65
65
Maximum Case-to-Sink A
RθCS
0.5
--
Maximum Junction-to-Case D,F
RθJC
* Drain current limited by maximum junction temperature.
0.56
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AOT12N60 / AOTF12N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
1 RθJC=0.45°C/W
www.datasheet4u.com
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N60 (Note F)
100
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
1 RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
200
16
0.1
0.01
0.001
0.00001
PD
0.0001
Single Pulse
IF=12A,dI/dt=100A/µs,VDS=100V
IF=01.020A1,dI/dt=1000A.0/µ1 s,VDS=100V0.1
Ton T
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N60 (Note F)
100
50
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOT9610.PDF ] | |
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