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Teilenummer | BDW51C |
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Beschreibung | SILICON POWER TRANSISTOR | |
Hersteller | SavantIC | |
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Gesamt 3 Seiten SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDW51C
DESCRIPTION
www.datasheet4u.com
·With TO-3 package
·Complement to type BDW52C
·Excellent safe operating area
APPLICATIONS
·For use in power linear and
switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
100
100
5
15
20
7
125
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
1.4
UNIT
/W
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ BDW51C Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
BDW51A | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | Seme LAB |
BDW51B | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | Seme LAB |
BDW51C | Bipolar NPN Device | Seme LAB |
BDW51C | SILICON POWER TRANSISTOR | SavantIC |
Teilenummer | Beschreibung | Hersteller |
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www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |