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Teilenummer | MS1078 |
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Beschreibung | RF & MICROWAVE TRANSISTORS | |
Hersteller | Microsemi Corporation | |
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Gesamt 4 Seiten RF PRODUCTS DIVISION
MS1078
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
www.daTtahseheMet4Su.1co0m78 is a Class AB epitaxial silicon NPN planar transistor
designed primarily for SSB and communications. This device utilizes
emitter ballasting to achieve extreme ruggedness under severe
operating conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
!"Optimized for SSB
!"30 MHz
!"28 Volts
!"IMD –30dB
!"Common Emitter
!"Gold Metallization
!"POUT = 130 W PEP
!"GP = 12 dB Gain
APPLICATIONS/BENEFITS
!"HF SSB Applications
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Parameter
Value
Collector-Base Voltage
70
Collector-Emitter Voltage
35
Emitter-Base Voltage
4.0
Device Current
12
Power Dissipation
175
Junction Temperature
+200
Storage Temperature
-65 to +150
Unit
V
V
V
A
W
°C
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 1.0 °C/W
Copyright 2000
MSC1611.PDF 2000-11-06
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ MS1078 Schematic.PDF ] |
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