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IRL3705NS Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer IRL3705NS
Beschreibung HEXFET Power MOSFET
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 10 Seiten
IRL3705NS Datasheet, Funktion
www.datasheet4u.com
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3705NS)
l Low-profile through-hole (IRL3705NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3705NL) is available for low-
profile applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91502C
IRL3705NS/L
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.01
ID = 89A†
S
D 2 Pak
T O -26 2
Max.
89†
63
310
3.8
170
1.1
± 16
340
46
1.7
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.90
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/12/98






IRL3705NS Datasheet, Funktion
IRL3705NS/L
www.datasheet4u.com
15V
VDS
L
RG
10V
tp
D.U .T
IA S
0 .0 1
D R IV E R
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
800
ID
TOP
19A
33A
BOTTOM 46A
600
400
200
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
5.0 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

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