(PDF) CMBT5089 Datasheet - (CMBT5088 / CMBT5089) SILICON PLANAR EPITAXIAL TRANSISTORS

Número de pieza	CMBT5089
Descripción	(CMBT5088 / CMBT5089) SILICON PLANAR EPITAXIAL TRANSISTORS
Fabricantes	CDIL
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No Preview Available ! www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25 °C Junction temperature Collector-emitter saturation voltage IC = 10 mA; IB = 1 mA D.C. current gain IC = 100 µA; VCE = 5 V Transition frequency at f = 20 MHz IC = 500 µA; VCE = 5 V FR-5 Board = 1.0 × 0.75 × 0.062 in. VCB0 VCE0 IC Ptot Tj 5088 max. 35 max. 30 max. max. max. 5089 30 V 25 V 50 mA 225 mW 150 ° C VCEsat max. 0.5 V hFE min. 300 max. 900 400 1200 fT min. 50 MHz Continental Device India Limited Data Sheet Page 1 of 3 1 page

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PDF CMBT5089 Data sheet ( Hoja de datos )