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Número de pieza | SGB10N60 | |
Descripción | Fast S-igbt in Npt-technology | |
Fabricantes | Infineon Technologies Corporation | |
Logotipo | ||
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SGP10N60
SGB10N60, SGW10N60
Fast S-IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with
low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
Type
SGP10N60
SGB10N60
SGW10N60
VCE IC VCE(sat) Tj Package
600V 10A
2.2V
150°C TO-220AB
TO-263AB
TO-247AC
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 10 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Ordering Code
Q67041-A4710-A2
Q67041-A4710-A4
Q67040-S4234
Value
600
21
10.9
42
42
±20
70
Unit
V
A
V
mJ
10
104
-55...+150
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Mar-00
1 page www.DataSheet4U.com
SGP10N60
SGB10N60, SGW10N60
35A
30A
25A
VGE=20V
20A 15V
13V
11V
15A 9V
7V
10A 5V
5A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
35A
30A
25A
VGE=20V
20A 15V
13V
11V
15A 9V
7V
10A 5V
5A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
35A
30A
Tj=+25°C
-55°C
25A +150°C
20A
15A
10A
5A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
3.0V
IC = 20A
2.5V
2.0V
IC = 10A
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5 Mar-00
5 Page www.DataSheet4U.com
SGP10N60
SGB10N60, SGW10N60
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
11
Mar-00
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet SGB10N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
SGB10N60 | Fast S-igbt in Npt-technology | Infineon Technologies Corporation |
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