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Número de pieza | SPI80N08S2-07 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
SPI80N08S2-07
SPP80N08S2-07,SPB80N08S2-07
Product Summary
VDS 75 V
RDS(on) max. SMD version 7.1 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N08S2-07
SPB80N08S2-07
SPI80N08S2-07
Package
Ordering Code
P- TO220 -3-1 Q67040-S4263
P- TO263 -3-2 Q67040-S4264
P- TO262 -3-1 Q67060-S6082
Marking
2N0807
2N0807
2N0807
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=60V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
810
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
1 page www.DataSheet4U.com
SPI80N08S2-07
SPP80N08S2-07,SPB80N08S2-07
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
190
SPP80N08S2-07
Ptot = 300W
A
ji
160
140
120
100
80
60
VGS [V]
a 4.5
b 5.0
h
c 5.3
d
ge
5.5
5.8
f 6.0
g 6.3
f h 6.5
i 6.8
j
e
10.0
40 d
c
20
b
0a
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
160
A
120
100
80
60
40
20
0
0 1 2 3 4 5 VGS 7
V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
26 SPP80N08S2-07
mΩ
d
22
ef
gh
20
18
16
14
12
10
8i
6j
4
VGS [V] =
2
d ef
5.5 5.8 6.0
g hi j
6.3 6.5 6.8 10.0
0
0 20 40 60 80 100 120
A 160
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
120
S
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 A 120
ID
Page 5
2003-05-09
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SPI80N08S2-07.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPI80N08S2-07 | OptiMOS Power-Transistor | Infineon Technologies |
SPI80N08S2-07 | Power-Transistor | Infineon Technologies |
SPI80N08S2-07R | OptiMOS Power-Transistor | Infineon Technologies |
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