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SPI80N03S2-03 Schematic ( PDF Datasheet ) - Infineon Technologies

Teilenummer SPI80N03S2-03
Beschreibung OptiMOS Power-Transistor
Hersteller Infineon Technologies
Logo Infineon Technologies Logo 




Gesamt 8 Seiten
SPI80N03S2-03 Datasheet, Funktion
www.DataSheet4U.com
OptiMOS® Power-Transistor
Feature
N-Channel
Enhancement mode
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
P- TO262 -3-1
175°C operating temperature
Avalanche rated
dv/dt rated
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
Product Summary
VDS 30 V
RDS(on) max. SMD version 3.1 m
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N03S2-03
SPB80N03S2-03
SPI80N03S2-03
Package
Ordering Code
P- TO220 -3-1 Q67040-S4247
P- TO263 -3-2 Q67040-S4258
P- TO262 -3-1 Q67042-S4079
Marking
2N0303
2N0303
2N0303
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
810
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09






SPI80N03S2-03 Datasheet, Funktion
www.DataSheet4U.com
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 80 A, VGS = 10 V
SPP80N03S2-03
8.5
m
7
6
5
4 98%
3
typ
2
1
0
-60 -20 20 60 100 140 °C 200
Tj
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 5
pF
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
4
V
3
1.25 mA
2.5
250 µA
2
1.5
1
0.5
0
-60 -20 20 60 100 °C 180
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 3 SPP80N03S2-03
A
10 4
Ci s s
10 2
Co s s
10 3
Cr s s
10 2
0
5
10 15 20 V
30
VDS
10 1
10 0
0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
Page 6
2003-05-09

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