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PDF BTB06 Data sheet ( Hoja de datos )
| Número de pieza | BTB06 | |
| Descripción | Discrete Triacs | |
| Fabricantes | Sirectifier Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTB06 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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BTB/BTA06
Discrete Triacs(Non-Isolated/Isolated)
G
T2
T1
T2
G
T1
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IT(RMS) RMS on-state current (full sine wave)
TO-22 0AB
Tc = 100 °C
6
A
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x I GT , tr <_ 100 ns
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
63
60
21
50
tp = 20 µs
Tj = 125°C
Tj = 125°C
4
1
- 40 to + 150
- 40 to + 125
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB
IGT (1)
VGT
VD = 12 V
RL = 30 Ω
I - II - III
I - II - III
VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III
IH (2)
IL
IT = 100 mA
IG = 1.2 IGT
I - III
II
dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C
(dI/dt)c (2) Without snubber
Tj = 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
CW BW
35 50
1.3
0.2
35 50
50 70
60 80
400 1000
3.5 5.3
A
A²s
A/µs
A
W
°C
Unit
mA
V
V
mA
mA
V/µs
A/ms
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BTB06.PDF ] | |
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