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PDF AOU456 Data sheet ( Hoja de datos )
| Número de pieza | AOU456 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOU456
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU456 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU456 is Pb-free (meets ROHS & Sony
259 specifications). AOU456L is a Green Product
ordering option. AOU456 and AOU456L are
electrically identical.
TO-251
Features
VDS (V) = 25V
ID = 50A (VGS = 10V)
RDS(ON) <7 mΩ (VGS = 10V)
RDS(ON) <10 mΩ (VGS = 4.5V)
193
18
D
Top View
Drain Connected
to Tab
G DS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
G
S
Maximum
25
±20
50
50
150
30
45
50
25
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
41
2.1
Max
50
3
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOU456
TwYwPwI.CDAatLaSEhLeEeCt4TUR.cIoCmAL AND THERMAL CHARACTERISTICS
60
50
tA
=
L⋅ID
BV − VDD
40
30
20 TA=25°C
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
50
40
30
20
10
0
0
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
4.63
494 593
692 830
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
193
175
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOU456.PDF ] | |
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